Researchers develop new germanium-tin transistor as alternative to silicon

Scientists at the University of California, Los Angeles (UCLA) have developed a new type of transistor made from germanium-tin (GeSn) that could potentially replace silicon in future electronic devices.

The team of researchers, led by Professor Saeed Mohammadi, found that GeSn transistors have a higher electron mobility than silicon transistors, which means they can switch on and off faster and more efficiently. This could lead to faster and more powerful electronic devices.

Furthermore, GeSn transistors are compatible with existing silicon-based manufacturing processes, making it easier to integrate them into current technology.

According to Professor Mohammadi, "This is a significant breakthrough in the field of electronics. Our GeSn transistors have the potential to revolutionize the industry and pave the way for new, more advanced electronic devices."

The development of GeSn transistors could also have environmental benefits. Silicon-based transistors require high temperatures and toxic chemicals to manufacture, whereas GeSn transistors can be made at lower temperatures and with less harmful materials.

While GeSn transistors are still in the early stages of development, the UCLA team is optimistic about their potential. They plan to continue their research and explore new applications for this promising technology.

https://www.lifetechnology.com/blogs/life-technology-technology-news/researchers-develop-new-germanium-tin-transistor-as-alternative-to-silicon

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